A nonlinear lumped-element model of MESFET and HEMT deices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been deeloped and used to design an X-band hybrid amplifier. Excellent agreement between measurements and simulated performance in small-signal and nonlinear power characteristics has been obtained.
A New Instantaneous Model of Mesfet and Hemt Devices for Large Signal Circuit Design / M., C., A., D.M., S., D., Pisa, S., Tommasino, P., Trifiletti, A.. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - 29:3:(2001), pp. 187-190.
A New Instantaneous Model of Mesfet and Hemt Devices for Large Signal Circuit Design
PISA, Stefano;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
2001
Abstract
A nonlinear lumped-element model of MESFET and HEMT deices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been deeloped and used to design an X-band hybrid amplifier. Excellent agreement between measurements and simulated performance in small-signal and nonlinear power characteristics has been obtained.File allegati a questo prodotto
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