A nonlinear lumped-element model of MESFET and HEMT deices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been deeloped and used to design an X-band hybrid amplifier. Excellent agreement between measurements and simulated performance in small-signal and nonlinear power characteristics has been obtained.
A New Instantaneous Model of Mesfet and Hemt Devices for Large Signal Circuit Design / M., Cicolani; A., DI MARTINO; S., D'Innocenzo; Pisa, Stefano; Tommasino, Pasquale; Trifiletti, Alessandro. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - 29:3:(2001), pp. 187-190.
A New Instantaneous Model of Mesfet and Hemt Devices for Large Signal Circuit Design
PISA, Stefano;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
2001
Abstract
A nonlinear lumped-element model of MESFET and HEMT deices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been deeloped and used to design an X-band hybrid amplifier. Excellent agreement between measurements and simulated performance in small-signal and nonlinear power characteristics has been obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
