A study of the local structure of nickel oxide grown at high temps. in solid-state electrochem. cells as well as the basic concept of the oxidn. technique are reported.  XANES (x-ray absorption near-edge structure) at the O K-threshold and EXAFS at the Ni K-edge in Ni oxide were measured.  XANES spectroscopy at the O K-edge shows the defective nature of the oxide grown electrochem.  The Ni K-edge EXAFS is sensitive to the change in the oxide stoichiometry and was used: (1) for a rough evaluation of the defectivity value, (2) for the detn. of the interat. distance change in defective Ni oxide and (3) for the identification of the presence of defective Ni sites.  A tentative correlation between the oxides structure and oxidn. technique is reported.  The difference in the oxide defectivity was explained in terms of a retarding elec. field effect on the oxidn. kinetics.

LOCAL-STRUCTURE OF NICKEL-OXIDE GROWN AT HIGH-TEMPERATURES IN CERAMIC ELECTROLYTE CELLS / M., Tomellini; Gozzi, Daniele; Bianconi, Antonio; I., Davoli. - In: JOURNAL OF THE CHEMICAL SOCIETY. FARADAY TRANSACTIONS I. - ISSN 0300-9599. - STAMPA. - 83:part 2(1987), pp. 289-298. [10.1039/f19878300289]

LOCAL-STRUCTURE OF NICKEL-OXIDE GROWN AT HIGH-TEMPERATURES IN CERAMIC ELECTROLYTE CELLS

GOZZI, Daniele;BIANCONI, Antonio;
1987

Abstract

A study of the local structure of nickel oxide grown at high temps. in solid-state electrochem. cells as well as the basic concept of the oxidn. technique are reported.  XANES (x-ray absorption near-edge structure) at the O K-threshold and EXAFS at the Ni K-edge in Ni oxide were measured.  XANES spectroscopy at the O K-edge shows the defective nature of the oxide grown electrochem.  The Ni K-edge EXAFS is sensitive to the change in the oxide stoichiometry and was used: (1) for a rough evaluation of the defectivity value, (2) for the detn. of the interat. distance change in defective Ni oxide and (3) for the identification of the presence of defective Ni sites.  A tentative correlation between the oxides structure and oxidn. technique is reported.  The difference in the oxide defectivity was explained in terms of a retarding elec. field effect on the oxidn. kinetics.
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/253720
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact