We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs chain formation on InAs(110), analysing the valence band spectra and core levels in the whole coverage range from the self-assembling of the Cs chains to the cluster uptake at saturation coverage. The valence band data shows an insulating behaviour up to saturation coverage. The adsorption sites have been monitored by means of Cs-4d, In-4d and As-3d core levels. The Cs-4d core-level data shows two distinct components, consistent with the presence of two unequivalent Cs adsorption sites in the Cs nanowire. The In-4d and As-3d levels show Cs-induced extra components due to electronic level re-hybridization to the substrate atoms, and predominant charge transfer from Cs adatoms to In, in agreement with recent theoretical calculations. (C) 2001 Elsevier Science B.V. All rights reserved.

Adsorption sites at Cs nanowires grown on the InAs(110) surface / Betti, Maria Grazia; V., Corradini; G., Bertoni; Sandra, Gardonio; Mariani, Carlo; L., Gavioli; R., Belkhou; A., Taleb Ibrahimi. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 477:1(2001), pp. 35-42. [10.1016/s0039-6028(01)00702-6]

Adsorption sites at Cs nanowires grown on the InAs(110) surface

BETTI, Maria Grazia;MARIANI, CARLO;
2001

Abstract

We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs chain formation on InAs(110), analysing the valence band spectra and core levels in the whole coverage range from the self-assembling of the Cs chains to the cluster uptake at saturation coverage. The valence band data shows an insulating behaviour up to saturation coverage. The adsorption sites have been monitored by means of Cs-4d, In-4d and As-3d core levels. The Cs-4d core-level data shows two distinct components, consistent with the presence of two unequivalent Cs adsorption sites in the Cs nanowire. The In-4d and As-3d levels show Cs-induced extra components due to electronic level re-hybridization to the substrate atoms, and predominant charge transfer from Cs adatoms to In, in agreement with recent theoretical calculations. (C) 2001 Elsevier Science B.V. All rights reserved.
2001
alkali metals; chemisorption; indium arsenide; metal-semiconductor interfaces; soft x-ray photoelectron spectroscopy; soft x-ray photoelectron spectroscopy chemisorption
01 Pubblicazione su rivista::01a Articolo in rivista
Adsorption sites at Cs nanowires grown on the InAs(110) surface / Betti, Maria Grazia; V., Corradini; G., Bertoni; Sandra, Gardonio; Mariani, Carlo; L., Gavioli; R., Belkhou; A., Taleb Ibrahimi. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 477:1(2001), pp. 35-42. [10.1016/s0039-6028(01)00702-6]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/253050
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 14
  • ???jsp.display-item.citation.isi??? 14
social impact