Field effect (FE) a-Si:H solar cell promises an effective increase of conversion efficiency, respect to thin film p-i-n solar cells, by the use of an inversion layer at the cell surface obtained by FEs at amorphous silicon-insulator interface. In particular this structure avoids the presence of a p-doped window layer, which stems from the large absorption coefficient of a-Si:H. The window layer dramatically reduces cell efficiency. In this paper we present the first realization of a FE solar cell, based on the top channel configuration. Results on 0.25 and 1 cm2 cells will be presented showing the FE collection mechanism and experimental comparison with usual p-i-n solar cell on transparent conductive oxide. © 2002 Elsevier Science B.V. All rights reserved.
Experimental realization of field effect a-Si:H solar cells / DE CESARE, Giampiero; F., Chicarella; Palma, Fabrizio; G., Nobile; M., Tucci. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 427:1-2(2003), pp. 166-170. (Intervento presentato al convegno E-MRS, K tenutosi a Strasbourg nel 18 June 2003 through 21 June 2003) [10.1016/s0040-6090(02)01212-9].
Experimental realization of field effect a-Si:H solar cells
DE CESARE, Giampiero;PALMA, Fabrizio;
2003
Abstract
Field effect (FE) a-Si:H solar cell promises an effective increase of conversion efficiency, respect to thin film p-i-n solar cells, by the use of an inversion layer at the cell surface obtained by FEs at amorphous silicon-insulator interface. In particular this structure avoids the presence of a p-doped window layer, which stems from the large absorption coefficient of a-Si:H. The window layer dramatically reduces cell efficiency. In this paper we present the first realization of a FE solar cell, based on the top channel configuration. Results on 0.25 and 1 cm2 cells will be presented showing the FE collection mechanism and experimental comparison with usual p-i-n solar cell on transparent conductive oxide. © 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
