Technological aspects related to the fabrication of buried oxidized porous silicon waveguides (OPSWG) as the influence of swirl defects and a suitable epitaxial method to bury OPSWG have been investigated. The influence of swirl defects on OPSWG performances is presented. The formation of a non-homogeneous porous silicon, caused by swirl defects, results in an incomplete oxidation and in an increase of optical loses. The idea of burying waveguides has been tested by a suitable epi process covering using dichlorosilane and silane as reacting gases. The paper presents and discusses the preliminary results. In this paper, are presented the technological studies related to the fabrication of buried OPSWG: (i) swirl defects influence on the structure and on the guiding properties of OPSWG; (ii) epitaxial deposition process suitable for the realization of defects free silicon layer over the OPSWG. (C) 2002 Elsevier Science B.V. All rights reserved.
Technological aspects of oxidated porous silicon waveguides / Balucani, Marco; V., Bondarenko; N., Vorozov; Ferrari, Aldo. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 16:3-4(2003), pp. 586-590. (Intervento presentato al convegno Spring Meeting of the European-Materials-Research-Society (E-MRS) tenutosi a STRASBOURG, FRANCE nel JUN 18-21, 2002) [10.1016/s1386-9477(02)00687-2].
Technological aspects of oxidated porous silicon waveguides
BALUCANI, Marco;FERRARI, Aldo
2003
Abstract
Technological aspects related to the fabrication of buried oxidized porous silicon waveguides (OPSWG) as the influence of swirl defects and a suitable epitaxial method to bury OPSWG have been investigated. The influence of swirl defects on OPSWG performances is presented. The formation of a non-homogeneous porous silicon, caused by swirl defects, results in an incomplete oxidation and in an increase of optical loses. The idea of burying waveguides has been tested by a suitable epi process covering using dichlorosilane and silane as reacting gases. The paper presents and discusses the preliminary results. In this paper, are presented the technological studies related to the fabrication of buried OPSWG: (i) swirl defects influence on the structure and on the guiding properties of OPSWG; (ii) epitaxial deposition process suitable for the realization of defects free silicon layer over the OPSWG. (C) 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
