ZnO:Al films were deposited by RF magnetron sputtering in triode configuration applying an external DC electric field to the substrates. Reflection high-energy electron diffraction measurements characterized the different films as consisting of randomlyoriented zinc blende crystallites or randomly and texture-oriented wurtzite crystallites, as well as of the amorphous phase. The non-resonant Raman spectra are strongly influenced by the presence of a built-in electric field at the grain boundaries and they do not depend on the symmetry of the microcrystallites. The Raman spectra taken at resonant excitation are more sensitive to the presence of the amorphous phase in the films. 2001 Elsevier Science B.V. All rights reserved.
Modification of the Structure of ZnO:Al films by control of the plasma parameters / Tzolov, M.; Tzenov, N.; DIMOVA MALINOVSKA, D.; Kalitzova, M.; Pizzuto, C.; Zollo, Giuseppe; Vitali, Gianfranco; Ivanov, I.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 396:(2001), pp. 274-279. [10.1016/S0040-6090(01)01182-8]
Modification of the Structure of ZnO:Al films by control of the plasma parameters
ZOLLO, Giuseppe;VITALI, Gianfranco;
2001
Abstract
ZnO:Al films were deposited by RF magnetron sputtering in triode configuration applying an external DC electric field to the substrates. Reflection high-energy electron diffraction measurements characterized the different films as consisting of randomlyoriented zinc blende crystallites or randomly and texture-oriented wurtzite crystallites, as well as of the amorphous phase. The non-resonant Raman spectra are strongly influenced by the presence of a built-in electric field at the grain boundaries and they do not depend on the symmetry of the microcrystallites. The Raman spectra taken at resonant excitation are more sensitive to the presence of the amorphous phase in the films. 2001 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
