Using an eight terminal geometry in standard current/voltage contact configurations we have determined both the out-of-plane and the in-plane d.c. resistivity in BSCCO(2212) samples at different doping level. Comparison of the temperature behaviors for these transport quantities highlights that use of these configurations results in incorrect determinations for the in-plane components. Exploiting the possibility of crossed comparisons when using a multi-terminal technique we are able to ascribe this effect at presence on the sample of surface layer with oxygen contents different from the bulk.
In-plane and out of plane resistivities in BiSrCaCuO(2212) single crystals at different doping level / Fastampa, Renato; Giura, Maurizio; Marcon, R; Sarti, Stefano; Silva, E.. - In: INTERNATIONAL JOURNAL OF MODERN PHYSICS B. - ISSN 0217-9792. - STAMPA. - 17:(2003), pp. 867-872. [10.1142/S0217979203016741]
In-plane and out of plane resistivities in BiSrCaCuO(2212) single crystals at different doping level.
FASTAMPA, Renato;GIURA, Maurizio;SARTI, Stefano;
2003
Abstract
Using an eight terminal geometry in standard current/voltage contact configurations we have determined both the out-of-plane and the in-plane d.c. resistivity in BSCCO(2212) samples at different doping level. Comparison of the temperature behaviors for these transport quantities highlights that use of these configurations results in incorrect determinations for the in-plane components. Exploiting the possibility of crossed comparisons when using a multi-terminal technique we are able to ascribe this effect at presence on the sample of surface layer with oxygen contents different from the bulk.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
