Cross-sectional high resolution transmission electron microscopy was applied to 140 keV Zn1 implanted GaAs at elevated temperature (110610 °C). Gaussian-like in-depth distributions of damage clusters, retaining some features of the original crystal lattice, were observed. The distribution maximum was found located between about 55 and 80 nm below the implanted surface. Low-power pulsed-laser annealing of the implanted samples induced both migration and clustering of radiation defects in the region extending from the surface and 80 nm depth, combined with nearly complete recrystallization of the material below this layer.
High Resolution Transmission Electron Microscopy of Elevated Temperature Zn+ Implanted and Low-Power Pulsed-Laser Annealed GaAs / Zollo, Giuseppe; C., Pizzuto; Vitali, Gianfranco; M., Kalitzova; D., Manno. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 88:(2000), pp. 1806-1810.
High Resolution Transmission Electron Microscopy of Elevated Temperature Zn+ Implanted and Low-Power Pulsed-Laser Annealed GaAs
ZOLLO, Giuseppe;VITALI, Gianfranco;
2000
Abstract
Cross-sectional high resolution transmission electron microscopy was applied to 140 keV Zn1 implanted GaAs at elevated temperature (110610 °C). Gaussian-like in-depth distributions of damage clusters, retaining some features of the original crystal lattice, were observed. The distribution maximum was found located between about 55 and 80 nm below the implanted surface. Low-power pulsed-laser annealing of the implanted samples induced both migration and clustering of radiation defects in the region extending from the surface and 80 nm depth, combined with nearly complete recrystallization of the material below this layer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
