XPS depth profiling of lase-annealed Zn+-implanted GaAs

Data on the effects of 140 keV Zn -implantation in 100 GaAs and the consequent low power pulsed laser annealing . LPPLA on the AsrGa ratio and the chemical states of the elements at the surface and in the subsurface region are presented. The results include the depth distribution of the elements for virgin, as-implanted and implantedqLPPLA w . 2x 30= 4.5r7.5 MWrcm samples. The X-ray photoelectron spectra of as-implanted samples show that a low-intensity Zn 2p peak is observed after 20 min of Arq sputtering with an energy of 3 keV, corresponding to about 20 nm of etched material. The depth profiling XPS analysis confirms the ‘recovering’ of the stoichiometry of Znq-implanted specimens after 2. LPPLA with laser pulses of a power density in the energy window of 5–7 MWrcm . At laser pulse power densities 2. outside of this energy window 4.5 and 7.5 MWrcm Zn appears again in the XP spectra after 20 min sputtering as in the case of as-implanted GaAs.