Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T c below which the As evaporation rate is negligible.
Temperature behavior of implanted and pulsed laser irradiated GaAs / Zollo, Giuseppe; Palumbo, Luigi; Rossi, Marco; Vitali, Gianfranco. - In: APPLIED PHYSICS. A, SOLIDS AND SURFACES. - ISSN 0721-7250. - STAMPA. - 56:(1993), pp. 409-411. [10.1007/BF00332572]
Temperature behavior of implanted and pulsed laser irradiated GaAs
ZOLLO, Giuseppe;PALUMBO, Luigi;ROSSI, Marco;VITALI, Gianfranco
1993
Abstract
Recent studies have shown that the Low-Power Pulsed-Laser Annealing (LPPLA) of ion-implanted GaAs specimens can be realized in a power-density window in which a complete structural reordering is guaranted. As the experimentally employed conditions allow us to describe the theoretical problem in an unidimensional space domain, we describe here a method to investigate the in-depth temperature behavior during the low-power pulsed-laser irradiation of ion-implanted semiconductors. The application of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the critical temperature T c below which the As evaporation rate is negligible.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
