Sputter-induced electronic stales and stoichiometry at the low ion-energy sputter-annealed InAs(110) surface compared to cleaved InAs(110) have been studied by Auger and UV photoelectron spectroscopy. Sputtering modifies the surface electronic structure even with 0.5 keV Ar+ ions. In particular, InAs(110) surface states are quenched, while sputter-induced electronic states in the band gap close to the Fermi level are present. After the sputtering process a variation of the In bonding coordination is observed in the surface and subsurface region while maintaining the correct average stoichiometry. Subsequent annealing induces a reordering process and a light accumulation layer in the subsurface region. (C) 1997 Elsevier Science B.V.
Surface modification of InAs(110) surface by low energy ion sputtering / Vincenzo, Martinelli; Lidija, Siller; Betti, Maria Grazia; Mariani, Carlo; U., Delpennino. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 391:1-3(1997), pp. 73-80. [10.1016/s0039-6028(97)00456-1]
Surface modification of InAs(110) surface by low energy ion sputtering
BETTI, Maria Grazia;MARIANI, CARLO;
1997
Abstract
Sputter-induced electronic stales and stoichiometry at the low ion-energy sputter-annealed InAs(110) surface compared to cleaved InAs(110) have been studied by Auger and UV photoelectron spectroscopy. Sputtering modifies the surface electronic structure even with 0.5 keV Ar+ ions. In particular, InAs(110) surface states are quenched, while sputter-induced electronic states in the band gap close to the Fermi level are present. After the sputtering process a variation of the In bonding coordination is observed in the surface and subsurface region while maintaining the correct average stoichiometry. Subsequent annealing induces a reordering process and a light accumulation layer in the subsurface region. (C) 1997 Elsevier Science B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
