Low-power pulsed-laser annealing was applied to Zn1-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambient of nitrogen at different pressures. The analytical techniques used include Rutherford backscattering spectroscopy, reflection high energy electron diffraction, and electrical measurements. The highest carrier activation, about 80%, was achieved at the same laser power density (6.5 MW/cm2) at which the best crystal recovery was obtained.
Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing / C., Pizzuto; Zollo, Giuseppe; Vitali, Gianfranco; D., Karpuzov; M., Kalitzova. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 82:(1997), pp. 5334-5338. [10.1063/1.366300]
Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing
ZOLLO, Giuseppe;VITALI, Gianfranco;
1997
Abstract
Low-power pulsed-laser annealing was applied to Zn1-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambient of nitrogen at different pressures. The analytical techniques used include Rutherford backscattering spectroscopy, reflection high energy electron diffraction, and electrical measurements. The highest carrier activation, about 80%, was achieved at the same laser power density (6.5 MW/cm2) at which the best crystal recovery was obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
