Annealing of a thin Bi layer grown on the Si(100)-(2 x 1) surface is known to produce well-ordered (2 x n) reconstructions. To investigate the Bi-induced electronic properties in these different structural configurations, we present ultraviolet photoemission and high-resolution electron energy loss spectroscopies on this interface. The adsorption of Bi produces clear modification of the substrate dimer-related surface states. On the (2 x n)-Bi reconstructed phases the data show a clear semiconducting behaviour, with the opening of a surface gap larger (1.3 eV) than that observed on the clean Si(100)-(2 x 1) surface (0.4 eV). Moreover, electronic states are detected within the gap up to 280 degrees C annealing temperature, whose possible origin is discussed. The absence of electronic excitations in the enlarged gap region and the modified density of occupied states observed for higher annealing temperatures (< 500 degrees C) suggest that the Bi adatoms induce breaking of the underlying Si-Si dimers.

Electronic properties of (2xn)-Bi reconstructions on Si(100) / L., Gavioli; Betti, Maria Grazia; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 377:(1997), pp. 215-219. (Intervento presentato al convegno 16th European Conference on Surface Science tenutosi a GENOA, ITALY nel SEP 09-13, 1996) [10.1016/s0039-6028(96)01357-x].

Electronic properties of (2xn)-Bi reconstructions on Si(100)

BETTI, Maria Grazia;MARIANI, CARLO
1997

Abstract

Annealing of a thin Bi layer grown on the Si(100)-(2 x 1) surface is known to produce well-ordered (2 x n) reconstructions. To investigate the Bi-induced electronic properties in these different structural configurations, we present ultraviolet photoemission and high-resolution electron energy loss spectroscopies on this interface. The adsorption of Bi produces clear modification of the substrate dimer-related surface states. On the (2 x n)-Bi reconstructed phases the data show a clear semiconducting behaviour, with the opening of a surface gap larger (1.3 eV) than that observed on the clean Si(100)-(2 x 1) surface (0.4 eV). Moreover, electronic states are detected within the gap up to 280 degrees C annealing temperature, whose possible origin is discussed. The absence of electronic excitations in the enlarged gap region and the modified density of occupied states observed for higher annealing temperatures (< 500 degrees C) suggest that the Bi adatoms induce breaking of the underlying Si-Si dimers.
1997
surface electronic phenomena
01 Pubblicazione su rivista::01a Articolo in rivista
Electronic properties of (2xn)-Bi reconstructions on Si(100) / L., Gavioli; Betti, Maria Grazia; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 377:(1997), pp. 215-219. (Intervento presentato al convegno 16th European Conference on Surface Science tenutosi a GENOA, ITALY nel SEP 09-13, 1996) [10.1016/s0039-6028(96)01357-x].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/244232
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