Low-Power Pulsed-Laser Annealing (LPPLA) has been applied to Zn-implanted InP samples kept in a controlled atmosphere (Ar or N-2). The chemical properties of the used gas play a crucial role to give rise to the electrical carrier activation (about 80%) of the processed InP. (C) 1998 Elsevier Science Ltd. All rights reserved.
Effects of Low-Power Pulsed-Laser Annealing on electrical properties of Zn-implanted InP / Vitali, Gianfranco; C., Pizzuto; Zollo, Giuseppe. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 106:7(1998), pp. 421-423. [10.1016/s0038-1098(98)00085-4]
Effects of Low-Power Pulsed-Laser Annealing on electrical properties of Zn-implanted InP
VITALI, Gianfranco;ZOLLO, Giuseppe
1998
Abstract
Low-Power Pulsed-Laser Annealing (LPPLA) has been applied to Zn-implanted InP samples kept in a controlled atmosphere (Ar or N-2). The chemical properties of the used gas play a crucial role to give rise to the electrical carrier activation (about 80%) of the processed InP. (C) 1998 Elsevier Science Ltd. All rights reserved.File allegati a questo prodotto
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