The effects of the ambient atmosphere in the annealing chamber on the electrical and structural characteristics of Zn-implanted III-V compound semiconductors, processed by low-power pulsed-laser annealing are presented. The samples were analyzed using several complementary experimental techniques: Reflection highenergy electron diffraction, Rutherford backscattering spectroscopy, Raman spectroscopy, secondary ion mass spectroscopy, and electrical measurements. During the laser beam irradiation in the presence of gas inlet into the annealing chamber the ambient gas atoms diffused well into the target changing the stoichiometry and the electrical parameters. Redistribution of the implanted impurity was also observed. By varying the type of gas used and its pressure, it was possible to achieve electrical activation of up to 80%. It seems all structure and electrical parameters achieve their best values at the same ambient atmosphere and density of the deposited laser power P, e.g., 1.5 atm of N2 and P56.5 MW/cm2 for InP.
Structural Reordering of Ion-Implanted GaAs and InP due to Laser Annealing in a Controlled Atmosphere / Vitali, Gianfranco; C., Pizzuto; Zollo, Giuseppe; D., Karpuzov; M., Kalitzova; P., VAN DER HEIDE; G., Scamarcio; V., Spagnolo; L., Chiavarone; D., Manno. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 59:(1999), pp. 2986-2994. [10.1103/PhysRevB.59.2986]
Structural Reordering of Ion-Implanted GaAs and InP due to Laser Annealing in a Controlled Atmosphere
VITALI, Gianfranco;ZOLLO, Giuseppe;
1999
Abstract
The effects of the ambient atmosphere in the annealing chamber on the electrical and structural characteristics of Zn-implanted III-V compound semiconductors, processed by low-power pulsed-laser annealing are presented. The samples were analyzed using several complementary experimental techniques: Reflection highenergy electron diffraction, Rutherford backscattering spectroscopy, Raman spectroscopy, secondary ion mass spectroscopy, and electrical measurements. During the laser beam irradiation in the presence of gas inlet into the annealing chamber the ambient gas atoms diffused well into the target changing the stoichiometry and the electrical parameters. Redistribution of the implanted impurity was also observed. By varying the type of gas used and its pressure, it was possible to achieve electrical activation of up to 80%. It seems all structure and electrical parameters achieve their best values at the same ambient atmosphere and density of the deposited laser power P, e.g., 1.5 atm of N2 and P56.5 MW/cm2 for InP.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.