Space charge layer formation and collective excitations of the Cs/InSb(110) and the Bi/InSb(110) interfaces have been studied by means of high resolution electron energy loss spectroscopy (HREELS). The influence of bismuth is effective in slightly enlarging the depletion layer thickness, while the alkali metal induces an accumulation layer up to the formation of one-dimensional (1D) chains. When a 2D Cs layer is formed the space charge layer is depleted of carriers. The influence of the atomic geometry on the Fermi level pinning is considered.
Space charge layer at metal/InSb(110) interfaces / Betti, Maria Grazia; V., Martinelli; R., Biagi; U., Del Pennino; Mariani, Carlo. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - 76:(1995), pp. 459-463. (Intervento presentato al convegno 6th International Conference on Electron Spectroscopy (ICES 6) tenutosi a ROME, ITALY nel JUN 19-23, 1995) [10.1016/0368-2048(95)02488-3].
Space charge layer at metal/InSb(110) interfaces
BETTI, Maria Grazia;MARIANI, CARLO
1995
Abstract
Space charge layer formation and collective excitations of the Cs/InSb(110) and the Bi/InSb(110) interfaces have been studied by means of high resolution electron energy loss spectroscopy (HREELS). The influence of bismuth is effective in slightly enlarging the depletion layer thickness, while the alkali metal induces an accumulation layer up to the formation of one-dimensional (1D) chains. When a 2D Cs layer is formed the space charge layer is depleted of carriers. The influence of the atomic geometry on the Fermi level pinning is considered.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
