In this letter we present a device, based on amorphous silicon material, able to detect infrared light through capacitance measurement at room temperature. The device is a p-c-n stacked structure, where c indicates a compensated amorphous silicon absorber layer. Operation is based on transitions between extended states in the valence band and defects in the forbidden gap excited by the infrared radiation. We found that the measured capacitance is sensitive to radiation from 800 nm to 5 μm. © 1998 American Institute of Physics.
Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; Palma, Fabrizio; M., Petri. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 72:10(1998), pp. 1229-1231. [10.1063/1.121022]
Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures
CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto;PALMA, Fabrizio;
1998
Abstract
In this letter we present a device, based on amorphous silicon material, able to detect infrared light through capacitance measurement at room temperature. The device is a p-c-n stacked structure, where c indicates a compensated amorphous silicon absorber layer. Operation is based on transitions between extended states in the valence band and defects in the forbidden gap excited by the infrared radiation. We found that the measured capacitance is sensitive to radiation from 800 nm to 5 μm. © 1998 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
