High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed LPPLA GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLAtechnique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer © 1996 American Institute of Physics.

Cross-sectional high resolution electron microscopy of Zn+ implanted and low-power pulsed-laser annealed GaAs / Vitali, Gianfranco; Zollo, Giuseppe; C., Pizzuto; D., Manno; M., Kalitzova; Rossi, Marco. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 69:(1996), pp. 4072-4074. [10.1063/1.117822]

Cross-sectional high resolution electron microscopy of Zn+ implanted and low-power pulsed-laser annealed GaAs

VITALI, Gianfranco;ZOLLO, Giuseppe;ROSSI, Marco
1996

Abstract

High resolution transmission electron microscopy has been used to investigate the lattice damage distribution in Zn+ implanted and implanted plus low-power pulsed-laser annealed LPPLA GaAs. The damage distribution of implanted samples has been examined in detail showing the presence of a continuous amorphous layer under the surface and stacking fault tetrahedra nuclei at the inner a c interface. A solid phase epitaxial regrowth of ion implanted GaAs has been induced by LPPLAtechnique. In the annealed samples, the crystalline recovering is characterized by a low density of residual extended defects lying in the fully recrystallized amorphous layer © 1996 American Institute of Physics.
1996
laser annealing; Electron microscopy; GaAs
01 Pubblicazione su rivista::01a Articolo in rivista
Cross-sectional high resolution electron microscopy of Zn+ implanted and low-power pulsed-laser annealed GaAs / Vitali, Gianfranco; Zollo, Giuseppe; C., Pizzuto; D., Manno; M., Kalitzova; Rossi, Marco. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 69:(1996), pp. 4072-4074. [10.1063/1.117822]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/242026
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