In this work, we have investigated the difference and the potentiality of amorphous crystalline silicon (c-Si) heterojunctions based on both n-type and p-type c-Si substrate. Experimental comparison of solar cell performances realized on different doping type crystalline wafer have been evaluated and discussed. We have analyzed with the aid of a numerical model, useful for multilayer structure description, the tran sport mechanism and the influence of interface defect density on the behavior of both kind of solar cell heterostructures. Differences in the technological steps needed to device formation have been considered for high efficiency solar cell. Finally, an explanation of the difference in the role played by the defect density at the interface for both kind of structure has been proposed. Keywords Heterojunction; Amorphous silicon; Defects
Comparison of amorphous / crystalline heterojunction solar cells based on n and p type crystalline silicon / M., Tucci; ., DELLA NOCE; E., Bobeico; F., Roca; DE CESARE, Giampiero; Palma, Fabrizio. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 451:(2004), pp. 355-359. [10.1016/j.tsf.2003.11.012]
Comparison of amorphous / crystalline heterojunction solar cells based on n and p type crystalline silicon
DE CESARE, Giampiero;PALMA, Fabrizio
2004
Abstract
In this work, we have investigated the difference and the potentiality of amorphous crystalline silicon (c-Si) heterojunctions based on both n-type and p-type c-Si substrate. Experimental comparison of solar cell performances realized on different doping type crystalline wafer have been evaluated and discussed. We have analyzed with the aid of a numerical model, useful for multilayer structure description, the tran sport mechanism and the influence of interface defect density on the behavior of both kind of solar cell heterostructures. Differences in the technological steps needed to device formation have been considered for high efficiency solar cell. Finally, an explanation of the difference in the role played by the defect density at the interface for both kind of structure has been proposed. Keywords Heterojunction; Amorphous silicon; DefectsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.