Thin films of zirconium silicate were obtained by alternative ablation of Zr and Si targets in oxygen reactive atmosphere; in a set of experiments a radiofrequency (RF) discharge beam was added to the pulsed laser deposition (PLD) system. Pt-coated silicon, Sapphire and glass were used as collectors. The third harmonics of the Nd:YAG laser (λ = 355 nm) working at 10 Hz and at a laser fluence varying in the range of (4-6 J/cm 2) was used. The oxygen pressure varied between 1 and 10 Pa and the substrate holder was kept at room temperature. The RF beam addition influence on the electrical, optical and morphological proprieties of zirconium silicate films was particularly investigated. The obtained films, with thicknesses in the range of 15-60nm, have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and electrical measurements. Dielectric permittivity values (real part) in the range of 7-13 and low losses (0.008-0.015) were measured for samples prepared with the RF oxygen beam addition.

Properties of zirconium silicate thin films prepared by lase ablation / Filipescu, ; N., Scarisoreanu; D. G., Matei; G., Dinescu; Ferrari, Aldo; Balucani, Marco; O., Toma; C., Ghica; L. C., Nistor; M., Dinescu. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - STAMPA. - 7:(2004), pp. 209-214. [10.1016/j.mssp.2004.09.122]

Properties of zirconium silicate thin films prepared by lase ablation

FERRARI, Aldo;BALUCANI, Marco;
2004

Abstract

Thin films of zirconium silicate were obtained by alternative ablation of Zr and Si targets in oxygen reactive atmosphere; in a set of experiments a radiofrequency (RF) discharge beam was added to the pulsed laser deposition (PLD) system. Pt-coated silicon, Sapphire and glass were used as collectors. The third harmonics of the Nd:YAG laser (λ = 355 nm) working at 10 Hz and at a laser fluence varying in the range of (4-6 J/cm 2) was used. The oxygen pressure varied between 1 and 10 Pa and the substrate holder was kept at room temperature. The RF beam addition influence on the electrical, optical and morphological proprieties of zirconium silicate films was particularly investigated. The obtained films, with thicknesses in the range of 15-60nm, have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and electrical measurements. Dielectric permittivity values (real part) in the range of 7-13 and low losses (0.008-0.015) were measured for samples prepared with the RF oxygen beam addition.
2004
01 Pubblicazione su rivista::01a Articolo in rivista
Properties of zirconium silicate thin films prepared by lase ablation / Filipescu, ; N., Scarisoreanu; D. G., Matei; G., Dinescu; Ferrari, Aldo; Balucani, Marco; O., Toma; C., Ghica; L. C., Nistor; M., Dinescu. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - STAMPA. - 7:(2004), pp. 209-214. [10.1016/j.mssp.2004.09.122]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/240579
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