In this paper we present a systematic investigation of the effects of electrical stress on reliability of zirconium oxide films. In particular, we monitored stress-induced leakage current, high-field conduction and capacitance curves as function of the applied voltage and the injected charge. Defect density in the bulk oxide have been extracted from measurements by means of literature models. As a result, a square root time dependence of the stress-induced defects has been found. (C) 2004 Elsevier Ltd. All rights reserved.
On the reliability of ZrO2 films for VLSI applications / Caputo, Domenico; Irrera, Fernanda. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 44:5(2004), pp. 739-745. [10.1016/j.microrel.2003.12.012]
On the reliability of ZrO2 films for VLSI applications
CAPUTO, Domenico;IRRERA, Fernanda
2004
Abstract
In this paper we present a systematic investigation of the effects of electrical stress on reliability of zirconium oxide films. In particular, we monitored stress-induced leakage current, high-field conduction and capacitance curves as function of the applied voltage and the injected charge. Defect density in the bulk oxide have been extracted from measurements by means of literature models. As a result, a square root time dependence of the stress-induced defects has been found. (C) 2004 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
