The anelastic spectrum of the solid solution Sc-O has been investigated on a polycrystalline sample from 360 to 570K for oxygen concentrations varying between 0.024 and 0.91 at.% O, as estimated by electrical resistivity and intentional doping. Two relaxation processes appear at 430 and 520 K for the vibration frequency of 3.5 kHz; both peaks are stable with thermal cycling and their intensities increase with the oxygen content. The process at lower temperature has been tentatively interpreted as due to the stress-induced hopping of oxygen atoms between the non equivalent tetrahedral and octahedral interstitial sites. A possible mechanism for the higher temperature process could be the dissolu-tion/formation of interacting O-O pairs. (C) 2003 Elsevier B.V. All rights reserved.

Anelastic relaxation processes due to hopping of interstitial oxygen in scandium / Trequattrini, Francesco; F., Cordero; G., Cannelli; Cantelli, Rosario. - In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - ISSN 0921-5093. - STAMPA. - 370:1-2(2004), pp. 93-95. ((Intervento presentato al convegno 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids tenutosi a Bilbao, SPAIN nel JUL 08-12, 2002 [10.1016/j.msea.2003.08.081].

Anelastic relaxation processes due to hopping of interstitial oxygen in scandium

TREQUATTRINI, Francesco;CANTELLI, Rosario
2004

Abstract

The anelastic spectrum of the solid solution Sc-O has been investigated on a polycrystalline sample from 360 to 570K for oxygen concentrations varying between 0.024 and 0.91 at.% O, as estimated by electrical resistivity and intentional doping. Two relaxation processes appear at 430 and 520 K for the vibration frequency of 3.5 kHz; both peaks are stable with thermal cycling and their intensities increase with the oxygen content. The process at lower temperature has been tentatively interpreted as due to the stress-induced hopping of oxygen atoms between the non equivalent tetrahedral and octahedral interstitial sites. A possible mechanism for the higher temperature process could be the dissolu-tion/formation of interacting O-O pairs. (C) 2003 Elsevier B.V. All rights reserved.
o-relaxation; o-specific electrical resistivity
01 Pubblicazione su rivista::01a Articolo in rivista
Anelastic relaxation processes due to hopping of interstitial oxygen in scandium / Trequattrini, Francesco; F., Cordero; G., Cannelli; Cantelli, Rosario. - In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - ISSN 0921-5093. - STAMPA. - 370:1-2(2004), pp. 93-95. ((Intervento presentato al convegno 13th International Conference on Internal Friction and Ultrasonic Attentuation in Solids tenutosi a Bilbao, SPAIN nel JUL 08-12, 2002 [10.1016/j.msea.2003.08.081].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/236248
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