It is interesting to consider the problem of the presence of defects in the semiconductor binary compounds by observing their elemental tetrahedron distortions, caused by the creation of vacancies and interstitial atoms within the tetrahedra and so on. Our model thus considers the system A(Vz(x)Z(1-x)) and (A(1-y)Va(y))Z as composed of five defect tetrahedron configurations where A is a cation atom, Z an anion atom, V-alpha-cation vacancy, V-z-anion vacancy. In this communication we present far IR (FIR) spectra obtained at the DAFNE facility of Laboratori Nazionali di Frascati (INFN) using its synchrotron radiation. Two samples of CdTe are considered: sample-1 was grown by the PVT technique and sample-2 using the same technique but on the basis of, polycrystalline CdTe previously purified from oxygen in hydrogen atmosphere.

Manifestation of defects in phonon spectra of binary zinc-blende compounds / J., Polit; E. M., Sheregii; J., Cebulski; M., Pociask; A., Kisiel; A., Mycielski; B. V., Robouch; E., Burattini; A., Marcelli; M., Cestelli Guidi; M., Piccinni; Calvani, Paolo; Nucara, Alessandro. - In: THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS. - ISSN 1286-0042. - 27:1-3(2004), pp. 321-324. (Intervento presentato al convegno 10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) tenutosi a Batz sur Mer, FRANCE nel SEP 29-OCT 02, 2003) [10.1051/epjap:2004078].

Manifestation of defects in phonon spectra of binary zinc-blende compounds

CALVANI, Paolo;NUCARA, Alessandro
2004

Abstract

It is interesting to consider the problem of the presence of defects in the semiconductor binary compounds by observing their elemental tetrahedron distortions, caused by the creation of vacancies and interstitial atoms within the tetrahedra and so on. Our model thus considers the system A(Vz(x)Z(1-x)) and (A(1-y)Va(y))Z as composed of five defect tetrahedron configurations where A is a cation atom, Z an anion atom, V-alpha-cation vacancy, V-z-anion vacancy. In this communication we present far IR (FIR) spectra obtained at the DAFNE facility of Laboratori Nazionali di Frascati (INFN) using its synchrotron radiation. Two samples of CdTe are considered: sample-1 was grown by the PVT technique and sample-2 using the same technique but on the basis of, polycrystalline CdTe previously purified from oxygen in hydrogen atmosphere.
2004
01 Pubblicazione su rivista::01a Articolo in rivista
Manifestation of defects in phonon spectra of binary zinc-blende compounds / J., Polit; E. M., Sheregii; J., Cebulski; M., Pociask; A., Kisiel; A., Mycielski; B. V., Robouch; E., Burattini; A., Marcelli; M., Cestelli Guidi; M., Piccinni; Calvani, Paolo; Nucara, Alessandro. - In: THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS. - ISSN 1286-0042. - 27:1-3(2004), pp. 321-324. (Intervento presentato al convegno 10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) tenutosi a Batz sur Mer, FRANCE nel SEP 29-OCT 02, 2003) [10.1051/epjap:2004078].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/232047
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