In this paper we present a device, based on amorphous silicon technology, fabricated on ceramic substrate able to perform pressure measurement with both good linearity and sensitivity. The active material of the sensor is a thin film (below 5 nm) of chromium silicide formed at room temperature on an n-type amorphous silicon layer. Sensors with different shapes (square and rectangular) and positions on the ceramic membrane have been characterized. Sensitivity in the order of 400 mu V/kPa has been achieved. (c) 2006 Elsevier B.V. All rights reserved.
Chromium silicide film on ceramic substrate for pressure measurement / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 515:19 SPEC. ISS.(2007), pp. 7647-7649. (Intervento presentato al convegno 5th Symposium on Thin Films for Large Area Electronics held at the EMRS 2006 Spring Meeting tenutosi a Nice, FRANCE nel JUN, 2006) [10.1016/j.tsf.2006.11.086].
Chromium silicide film on ceramic substrate for pressure measurement
CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto
2007
Abstract
In this paper we present a device, based on amorphous silicon technology, fabricated on ceramic substrate able to perform pressure measurement with both good linearity and sensitivity. The active material of the sensor is a thin film (below 5 nm) of chromium silicide formed at room temperature on an n-type amorphous silicon layer. Sensors with different shapes (square and rectangular) and positions on the ceramic membrane have been characterized. Sensitivity in the order of 400 mu V/kPa has been achieved. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
