An innovative balanced photodiode structure made in amorphous silicon/amorphous silicon carbide, suitable for detecting small current variations on a large background signal, is presented and characterized. The structure is a three-terminal device, constituted by two series-connected n-i-p photosensors, where the output signal is the difference between the currents flowing through the two diodes. The layer thickness and optical properties of the thin-film materials and the geometry or the structure have been optimized for the detection of ultraviolet radiation. Common mode rejection ratio (CMRR) values ranging between 30 dB at 254 run and 42 dB at 365 nm have been measured, independent on the bias voltage. The decrease of the CMRR at lower wavelengths has been ascribed to differences in the surfaces of the two diodes exposed to the light.

Innovative Amorphous Silicon Balanced Ultraviolet Photodiode / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 29:12(2008), pp. 1299-1301. [10.1109/led.2008.2005590]

Innovative Amorphous Silicon Balanced Ultraviolet Photodiode

CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto
2008

Abstract

An innovative balanced photodiode structure made in amorphous silicon/amorphous silicon carbide, suitable for detecting small current variations on a large background signal, is presented and characterized. The structure is a three-terminal device, constituted by two series-connected n-i-p photosensors, where the output signal is the difference between the currents flowing through the two diodes. The layer thickness and optical properties of the thin-film materials and the geometry or the structure have been optimized for the detection of ultraviolet radiation. Common mode rejection ratio (CMRR) values ranging between 30 dB at 254 run and 42 dB at 365 nm have been measured, independent on the bias voltage. The decrease of the CMRR at lower wavelengths has been ascribed to differences in the surfaces of the two diodes exposed to the light.
2008
amorphous materials; p-i-n photodiodes; ultraviolet (uv) detectors
01 Pubblicazione su rivista::01a Articolo in rivista
Innovative Amorphous Silicon Balanced Ultraviolet Photodiode / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 29:12(2008), pp. 1299-1301. [10.1109/led.2008.2005590]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/227169
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 2
social impact