In this work we present the design and fabrication of a 16 x 16 ultraviolet sensor array, deposited by Plasma Enhanced Chemical Vapor Deposition on glass substrate, suitable for label-free DNA parallel analysis. Each pixel is constituted by two back-to-back series connected coplanar amorphous silicon/amorphous silicon carbide n-i-p diodes. One junction acts as photosensor (with 1.4 x 1.8 mm(2) area) and the other as switching diode (with 200 x 200 mu m(2) area). The array performances have been optimized as a trade-off between the competitive requirements of the photosensor and of the switching element that have the same n-i-p stacked layers, since they have been deposited during the same deposition run. A responsivity around 60 mA/W in the ultraviolet range and an ON/OFF dark current ratio of six orders of magnitude have been achieved for the photodiode and the switching element, respectively. (C) 2009 Elsevier B.V. All rights reserved.
On the fabrication and characterization of amorphous silicon ultra-violet sensor array / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; M., Tucci. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 517:23(2009), pp. 6422-6425. (Intervento presentato al convegno 6th Symposium on Thin Films for Large Area Electronics held at the E-MRS Spring Meeting tenutosi a Strasbourg, FRANCE nel MAY 26-30, 2008) [10.1016/j.tsf.2009.02.064].
On the fabrication and characterization of amorphous silicon ultra-violet sensor array
CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto;
2009
Abstract
In this work we present the design and fabrication of a 16 x 16 ultraviolet sensor array, deposited by Plasma Enhanced Chemical Vapor Deposition on glass substrate, suitable for label-free DNA parallel analysis. Each pixel is constituted by two back-to-back series connected coplanar amorphous silicon/amorphous silicon carbide n-i-p diodes. One junction acts as photosensor (with 1.4 x 1.8 mm(2) area) and the other as switching diode (with 200 x 200 mu m(2) area). The array performances have been optimized as a trade-off between the competitive requirements of the photosensor and of the switching element that have the same n-i-p stacked layers, since they have been deposited during the same deposition run. A responsivity around 60 mA/W in the ultraviolet range and an ON/OFF dark current ratio of six orders of magnitude have been achieved for the photodiode and the switching element, respectively. (C) 2009 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
