In this work, we present a new amorphous silicon balanced photodiode, which takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. The device has been fabricated with a four-mask process and characterized in dark and under 365 nm monochromatic ultraviolet radiation. Results have demonstrated the ability of the structure to detect differential currents three orders of magnitude lower than the current flowing in each sensor. Common mode rejection ratio (CMRR) values around 42 dB have been found comparable with those obtained in other crystalline differential diode structures. The CMRR resulted constant with both the reverse bias voltage and the radiation intensity. © 2009 Elsevier B.V. All rights reserved.

Amorphous silicon balanced photodiode for detection of ultraviolet radiation / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; M., Tucci. - In: SENSORS AND ACTUATORS. A, PHYSICAL. - ISSN 0924-4247. - 153:1(2009), pp. 1-4. [10.1016/j.sna.2009.04.017]

Amorphous silicon balanced photodiode for detection of ultraviolet radiation

CAPUTO, Domenico;DE CESARE, Giampiero;NASCETTI, Augusto;
2009

Abstract

In this work, we present a new amorphous silicon balanced photodiode, which takes advantage of the differential measurement to reveal very small variations of photocurrent in a large background current signal. The device has been fabricated with a four-mask process and characterized in dark and under 365 nm monochromatic ultraviolet radiation. Results have demonstrated the ability of the structure to detect differential currents three orders of magnitude lower than the current flowing in each sensor. Common mode rejection ratio (CMRR) values around 42 dB have been found comparable with those obtained in other crystalline differential diode structures. The CMRR resulted constant with both the reverse bias voltage and the radiation intensity. © 2009 Elsevier B.V. All rights reserved.
2009
amorphous materials; p-i-n photodiodes; ultraviolet detectors
01 Pubblicazione su rivista::01a Articolo in rivista
Amorphous silicon balanced photodiode for detection of ultraviolet radiation / Caputo, Domenico; DE CESARE, Giampiero; Nascetti, Augusto; M., Tucci. - In: SENSORS AND ACTUATORS. A, PHYSICAL. - ISSN 0924-4247. - 153:1(2009), pp. 1-4. [10.1016/j.sna.2009.04.017]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/226056
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