The invention concerns Spirobifluorene derivatives having the general formula (II) and the corresponding, radical anions that can be represented via the general formula (II): in which K, L, M and N, the same or different from each other, are independently: H or A-C-O, with the proviso that it is never K=L=M=N-H, wherein A is an aromatic group, possibly substituted with at least an R' group selected in the group of the substituents commonly used in organic chemistry and/or at least one R group where R=aliphatic radical. The invention also concerns the method for preparing said derivatives and radical anions.; Said compounds are applied in the field of components for molecular electronics, in particular systems for electroluminescence, molecular-based computational systems, OLEDs, molecular switching components, components for non-linear optics, field-effect transistors and semiconductors with negative differential resistance.
Spirobifluorene derivatives, their preparation and uses thereof / Fioravanti, G.; Mattiello, Leonardo; Rampazzo, L.. - (2006).
Spirobifluorene derivatives, their preparation and uses thereof.
MATTIELLO, Leonardo;
2006
Abstract
The invention concerns Spirobifluorene derivatives having the general formula (II) and the corresponding, radical anions that can be represented via the general formula (II): in which K, L, M and N, the same or different from each other, are independently: H or A-C-O, with the proviso that it is never K=L=M=N-H, wherein A is an aromatic group, possibly substituted with at least an R' group selected in the group of the substituents commonly used in organic chemistry and/or at least one R group where R=aliphatic radical. The invention also concerns the method for preparing said derivatives and radical anions.; Said compounds are applied in the field of components for molecular electronics, in particular systems for electroluminescence, molecular-based computational systems, OLEDs, molecular switching components, components for non-linear optics, field-effect transistors and semiconductors with negative differential resistance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.