In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two AlGaN/GaN Distributed Bragg Reflectors on sapphire substrate, designed to generate a λ= 800 nm frequency downconverted signal (χ(2) effect) from an incident pump signal at λ= 400 nm. The heterostructure was epitaxially grown by metal organic chemical vapour deposition (MOCVD) and integrates a properly designed 1D-PhC grating, which amplifies the signal by exploiting the double effect of cavity resonance and non linear GaN enhancement. The integrated 1D-PhC microcavity was fabricate combing a high resolution e-beam writing with a deep etching technique. For the pattern transfer we used ~ 170 nm layer Cr metal etch mask obtained by means of high quality lift-off technique based on the use of bi-layer resist (PMMA/MMA). At the same time, plasma conditions have been optimized in order to achieve deeply etched structures (depth over 1 micron) with a good verticality of the sidewalls (very close to 90°). Gratings with well controlled sizes (periods of 150 nm, 230 nm and 400 nm respectively) were achieved after the pattern is transferred to the GaN/AlGaN heterostructure. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Fabrication of GaN/AlGaN 1D photonic crystals designed for nonlinear optical applications / Sibilia, Concetta; G., Epifani; V., Tasco; Braccini, Matteo; Larciprete, Maria Cristina. - 7713:(2010), pp. 771316-771316-7. (Intervento presentato al convegno Photonic Crystal Materials and Devices IX tenutosi a Brussels nel 12 April 2010 through 15 April 2010) [10.1117/12.854470].

Fabrication of GaN/AlGaN 1D photonic crystals designed for nonlinear optical applications

SIBILIA, Concetta;BRACCINI, MATTEO;LARCIPRETE, Maria Cristina
2010

Abstract

In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two AlGaN/GaN Distributed Bragg Reflectors on sapphire substrate, designed to generate a λ= 800 nm frequency downconverted signal (χ(2) effect) from an incident pump signal at λ= 400 nm. The heterostructure was epitaxially grown by metal organic chemical vapour deposition (MOCVD) and integrates a properly designed 1D-PhC grating, which amplifies the signal by exploiting the double effect of cavity resonance and non linear GaN enhancement. The integrated 1D-PhC microcavity was fabricate combing a high resolution e-beam writing with a deep etching technique. For the pattern transfer we used ~ 170 nm layer Cr metal etch mask obtained by means of high quality lift-off technique based on the use of bi-layer resist (PMMA/MMA). At the same time, plasma conditions have been optimized in order to achieve deeply etched structures (depth over 1 micron) with a good verticality of the sidewalls (very close to 90°). Gratings with well controlled sizes (periods of 150 nm, 230 nm and 400 nm respectively) were achieved after the pattern is transferred to the GaN/AlGaN heterostructure. © 2010 Copyright SPIE - The International Society for Optical Engineering.
2010
Photonic Crystal Materials and Devices IX
deep-etching; electron beam lithography; nitride compounds; nonlinear optics; photonic crystals
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Fabrication of GaN/AlGaN 1D photonic crystals designed for nonlinear optical applications / Sibilia, Concetta; G., Epifani; V., Tasco; Braccini, Matteo; Larciprete, Maria Cristina. - 7713:(2010), pp. 771316-771316-7. (Intervento presentato al convegno Photonic Crystal Materials and Devices IX tenutosi a Brussels nel 12 April 2010 through 15 April 2010) [10.1117/12.854470].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/21606
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