A new strategy for creating quantum light emitters via post‐growth hydrogen‐ion irradiation of III‐V nanowires

Energy-tunable single-photon emitters (SPEs) compatible with Si photonic platforms are key for scalable quantum photonic technologies. In the present work, we demonstrate a post-growth method to realise tunable SPEs in dilute nitrides GaAs/GaAsN/GaAs core-multishell single nanowires (NWs) on a Si substrate. Excitons confined in the lower-gap GaAsN shell are predominantly localized in N-cluster states, leading to a nearly continuous emission band in the photoluminescence (PL) spectra at low temperature. Post-growth irradiation with low-energy H-ions promotes the formation of N-H complexes that sizably suppress N-induced localized states in the electronic potential. This changes the NW PL dramatically, with the appearance of energy-tunable (900-1000 nm), spectrally isolated, narrow excitonic lines. Time-resolved & micro;-PL reveals ns-scale lifetimes associated with excitons localized at potential minima. These sharp emission lines at 5 K operate as SPEs, as demonstrated by second-order autocorrelation measurements under continuous-wave and pulsed excitation. This approach paves the way for using dilute nitride NWs as a Si-compatible platform for post-growth energy-tunable site-controlled SPEs.