Epitaxial layers of water-soluble Sr3Al2O6 were fabricated as sacrificial layers on SrTiO3 (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr3Al2O6 as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies.
Water-soluble sacrificial layer of Sr3Al2O6 for the synthesis of free-standing doped ceria and strontium titanate / Sanna, S.; Krymskaya, O.; Tebano, A.. - In: APPLIED SCIENCES. - ISSN 2076-3417. - 15:4(2025), pp. 1-12. [10.3390/app15042192]
Water-soluble sacrificial layer of Sr3Al2O6 for the synthesis of free-standing doped ceria and strontium titanate
Krymskaya O.
Conceptualization
;
2025
Abstract
Epitaxial layers of water-soluble Sr3Al2O6 were fabricated as sacrificial layers on SrTiO3 (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr3Al2O6 as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies.| File | Dimensione | Formato | |
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