Proton irradiation on hydrogenated amorphous silicon flexible devices

Menichelli, M.; Aziz, S.; Bashiri, A.; Bizzarri, M.; Buti, C.; Calcagnile, L.; Calvo, D.; Caprai, M.; Caputo, D.; Caricato, A. P.; Catalano, R.; Cazzanelli, M.; Cirio, R.; Cirrone, G. A. P.; Cittadini, F.; Croci, T.; Cuttone, G.; Cesare, G. D.; De Remigis, P.; Dunand, S.; Fabi, M.; Frontini, L.; Grimani, C.; Guarrera, M.; Hasnaoui, H.; Ionica, M.; Kanxheri, K.; Large, M.; Lenta, F.; Liberali, V.; Lovecchio, N.; Martino, M.; Maruccio, G.; Maruccio, L.; Mazza, G.; Monteduro, A. G.; Morozzi, A.; Nascetti, A.; Pallotta, S.; Papi, A.; Passeri, D.; Pedio, M.; Petasecca, M.; Petringa, G.; Peverini, F.; Placidi, P.; Polo, M.; Quaranta, A.; Quarta, G.; Rizzato, S.; Sabbatini, F.; Servoli, L.; Stabile, A.; Talamonti, C.; Thomet, J. E.; Mora, M. S. V.; Villani, M.; Wheadon, R. J.; Wyrsch, N.; Zema, N.; Tosti, L.

doi:10.1109/TNS.2025.3619653

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 μm thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 μm thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.

Proton irradiation on hydrogenated amorphous silicon flexible devices / Menichelli, M.; Aziz, S.; Bashiri, A.; Bizzarri, M.; Buti, C.; Calcagnile, L.; Calvo, D.; Caprai, M.; Caputo, D.; Caricato, A. P.; Catalano, R.; Cazzanelli, M.; Cirio, R.; Cirrone, G. A. P.; Cittadini, F.; Croci, T.; Cuttone, G.; Cesare, G. D.; De Remigis, P.; Dunand, S.; Fabi, M.; Frontini, L.; Grimani, C.; Guarrera, M.; Hasnaoui, H.; Ionica, M.; Kanxheri, K.; Large, M.; Lenta, F.; Liberali, V.; Lovecchio, N.; Martino, M.; Maruccio, G.; Maruccio, L.; Mazza, G.; Monteduro, A. G.; Morozzi, A.; Nascetti, A.; Pallotta, S.; Papi, A.; Passeri, D.; Pedio, M.; Petasecca, M.; Petringa, G.; Peverini, F.; Placidi, P.; Polo, M.; Quaranta, A.; Quarta, G.; Rizzato, S.; Sabbatini, F.; Servoli, L.; Stabile, A.; Talamonti, C.; Thomet, J. E.; Mora, M. S. V.; Villani, M.; Wheadon, R. J.; Wyrsch, N.; Zema, N.; Tosti, L.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - (2025), pp. 1-7. [10.1109/TNS.2025.3619653]