Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers

In the present work, we study the temperature-dependent (30–300 K) electron Hall mobility of liquid phase epitaxy (LPE)-grown n-type InPBi/InP epilayers prepared using growth melts containing high Bi (≈ 18 wt%) content. InPBi epilayer grown with 1.5 wt% Bi-containing melt has the highest Bi content, 0.8 at%, and shows no significant reduction in electron mobility (2150 cm2/V s at 300 K). However, InPBi epilayers grown with the highest Bi-containing melt (18 wt%) have less Bi content in the epilayer (0.36 at%) but show a significantly reduced room temperature electron mobility (96 cm2/V s). We find that the concentration of neutral impurity scatters increases with increasing Bi content in the growth melt. From the analysis of temperature-dependent mobility, we find that the Bi–Bi pairs/clusters or defect complexes play the dominant role in reducing electron mobility in the LPE-grown InPBi epilayer.