The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.
Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots / Sharma, A. S.; Dhar, S.. - In: JOURNAL OF ELECTRONIC MATERIALS. - ISSN 0361-5235. - 47:2(2018), pp. 1239-1243. [10.1007/s11664-017-5900-3]
Dependence of Strain Distribution on In Content in InGaN/GaN Quantum Wires and Spherical Quantum Dots
Sharma A. S.
;
2018
Abstract
The distribution of strain, developed in zero-dimensional quantum spherical dots and one-dimensional cylindrical quantum wires of an InGaN/GaN system is calculated as functions of radius of the structure and indium mole fraction. The strain shows strong dependence on indium mole fraction at small distances from the center. The strain associated with both the structures is found to decrease exponentially with the increase in dot or cylinder radius and increases linearly with indium content.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
