This paper presents the design and the characterization of a front-end circuit, designed in 28 nm CMOS, for real-time dosimetry in radiation diagnostics and radiation therapy. The front-end circuit is optimized for sensors made of hydrogenated amorphous silicon. The scheme is based on a current-to-frequency converter to sustain a large range of input currents. Three different programmable solutions have been investigated to be compatible with a wide variety of sensor sizes and applications. The front-end has been designed around three key specifications: an input capacitance between 1 pF and 50 pF, an input current from 100 pA to 2 µA, and a measurement time ranging from 400 µs to 60 ns. A first prototype has been fabricated and it is being characterized in laboratory.
A front-end circuit in 28 nm CMOS for hydrogenated amorphous silicon detectors in clinical dosimetry / Mazza, G.; Piccolo, L.; Antognini, L.; Aziz, S.; Bashiri, A.; Calcagnile, L.; Calvo, D.; Caputo, D.; Caricato, A. P.; Catalano, R.; Cirio, R.; Pablo Cirrone, G. A.; Croci, T.; Cuttone, G.; De Cesare, G.; De Remigis, P.; Dunand, S.; Fabi, M.; Frontini, L.; Grimani, C.; Guarrera, M.; Ionica, M.; Kanxheri, K.; Large, M.; Lenta, F.; Liberali, V.; Lovecchio, N.; Martino, M.; Maruccio, G.; Menichelli, M.; Monteduro, A. G.; Morozzi, A.; Moscatelli, F.; Nascetti, A.; Pallotta, S.; Passeri, D.; Pedio, M.; Petasecca, M.; Petringa, G.; Peverini, F.; Placidi, P.; Quarta, G.; Rizzato, S.; Sabbatini, F.; Servoli, L.; Stabile, A.; Talamonti, C.; Thomet, J. E.; Tosti, L.; Villani, M.; Wheadon, R. J.; Wyrsch, N.; Zema, N.. - (2024). (Intervento presentato al convegno 13th International Conference on Modern Circuits and Systems Technologies, MOCAST 2024 tenutosi a Sofia; Bulgaria) [10.1109/MOCAST61810.2024.10615398].
A front-end circuit in 28 nm CMOS for hydrogenated amorphous silicon detectors in clinical dosimetry
Caputo D.;De Cesare G.;Lovecchio N.;Nascetti A.;
2024
Abstract
This paper presents the design and the characterization of a front-end circuit, designed in 28 nm CMOS, for real-time dosimetry in radiation diagnostics and radiation therapy. The front-end circuit is optimized for sensors made of hydrogenated amorphous silicon. The scheme is based on a current-to-frequency converter to sustain a large range of input currents. Three different programmable solutions have been investigated to be compatible with a wide variety of sensor sizes and applications. The front-end has been designed around three key specifications: an input capacitance between 1 pF and 50 pF, an input current from 100 pA to 2 µA, and a measurement time ranging from 400 µs to 60 ns. A first prototype has been fabricated and it is being characterized in laboratory.| File | Dimensione | Formato | |
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