Characterization of the performance of hydrogenated amorphous silicon junction field-effect transistors as sensor preamplifier

This study focuses on an extensive investigation of the performance of hydrogenated amorphous silicon (a-Si:H) junction field-effect transistors (JFETs) as sensor preamplifier for Lab-on-Chip (LoC) applications. The integration of a-Si:H JFETs into LoC systems provides a compact and efficient solution for analog signal preamplification, crucial for accurate sensor data processing. By systematically varying the intrinsic and n-type layer thicknesses, we fabricated and characterized multiple JFET devices, and analyzed their electrical behavior through extensive measurements. The measured characteristics allowed us to determine the optimal deposition parameters to be used to achieve the best transconductance values. The results underscore the potential of a-Si:H technology in creating more integrated, efficient, and portable diagnostic tools for biomedical and other analytical fields.