The bulk electronic structure of AV3Sb5 (A=K, Cs) has been investigated by means of hard x-ray photoemission spectroscopy (HAXPES). The asymmetric shape of V and Sb core level peaks indicates that the V 3d and Sb 5p electrons are involved in the conduction band. The absence of a satellite structure in the V 2p HAXPES spectra shows a weak electronic correlation in the V 3d states. Splitting of the V 2p peak is not observed in the density wave phase indicating the charge disproportionation between the V sites is undetectably small, consistent with the weakness of the on-site electronic correlation and the possibility of bond order. The Sb 4d5/2 binding energy agrees with that of the Cs-terminated surface, indicating that the electronic structure of the V3Sb5 layer just below the Cs surface is close to the bulk.

Bulk electronic structure of AV3Sb5 (A = K, Cs) studied by hard x-ray photoemission spectroscopy. Possibility of bond order without charge disproportionation / Takegami, D.; Fujinuma, K.; Nakamura, R.; Yoshimura, M.; Tsuei, K. -D.; Saini, N. L.; Wang, Zhiwei; Yin, Jia-Xin; Mizokawa, T.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 109:15(2024), pp. 1-7. [10.1103/physrevb.109.155108]

Bulk electronic structure of AV3Sb5 (A = K, Cs) studied by hard x-ray photoemission spectroscopy. Possibility of bond order without charge disproportionation

Saini, N. L.;
2024

Abstract

The bulk electronic structure of AV3Sb5 (A=K, Cs) has been investigated by means of hard x-ray photoemission spectroscopy (HAXPES). The asymmetric shape of V and Sb core level peaks indicates that the V 3d and Sb 5p electrons are involved in the conduction band. The absence of a satellite structure in the V 2p HAXPES spectra shows a weak electronic correlation in the V 3d states. Splitting of the V 2p peak is not observed in the density wave phase indicating the charge disproportionation between the V sites is undetectably small, consistent with the weakness of the on-site electronic correlation and the possibility of bond order. The Sb 4d5/2 binding energy agrees with that of the Cs-terminated surface, indicating that the electronic structure of the V3Sb5 layer just below the Cs surface is close to the bulk.
2024
electronic structure; HAXPES; kagome lattice
01 Pubblicazione su rivista::01a Articolo in rivista
Bulk electronic structure of AV3Sb5 (A = K, Cs) studied by hard x-ray photoemission spectroscopy. Possibility of bond order without charge disproportionation / Takegami, D.; Fujinuma, K.; Nakamura, R.; Yoshimura, M.; Tsuei, K. -D.; Saini, N. L.; Wang, Zhiwei; Yin, Jia-Xin; Mizokawa, T.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 109:15(2024), pp. 1-7. [10.1103/physrevb.109.155108]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1728705
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