: High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-[Formula: see text], which reveals that the metallization process at 13-15 GPa is not associated with the indirect band-gap closure, occurring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition. Doping levels are also responsible for the asymmetric Fano line-shape of the [Formula: see text] infrared-active mode, which has been here detected and analyzed for the first time in a transition metal dichalcogenide compound. The pressure evolution of the phonon profile under pressure shows a symmetrization in the 13-15 GPa pressure range, which occurs simultaneously with the metallization and confirms the scenario proposed for the high pressure behaviour of 2H-[Formula: see text].

Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-$$\hbox {MoTe}_2$$ / Stellino, E.; Capitani, F.; Ripanti, F.; Verseils, M.; Petrillo, C.; Dore, P.; Postorino, P.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 12:1(2022). [10.1038/s41598-022-22089-0]

Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-$$\hbox {MoTe}_2$$

Stellino, E.
Primo
;
Dore, P.;Postorino, P.
Ultimo
2022

Abstract

: High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-[Formula: see text], which reveals that the metallization process at 13-15 GPa is not associated with the indirect band-gap closure, occurring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition. Doping levels are also responsible for the asymmetric Fano line-shape of the [Formula: see text] infrared-active mode, which has been here detected and analyzed for the first time in a transition metal dichalcogenide compound. The pressure evolution of the phonon profile under pressure shows a symmetrization in the 13-15 GPa pressure range, which occurs simultaneously with the metallization and confirms the scenario proposed for the high pressure behaviour of 2H-[Formula: see text].
2022
Transition metal dichalcogenides, far-infrared spectroscopy, high-pressure
01 Pubblicazione su rivista::01a Articolo in rivista
Broadband infrared study of pressure-tunable Fano resonance and metallization transition in 2H-$$\hbox {MoTe}_2$$ / Stellino, E.; Capitani, F.; Ripanti, F.; Verseils, M.; Petrillo, C.; Dore, P.; Postorino, P.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 12:1(2022). [10.1038/s41598-022-22089-0]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1707738
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