We investigated the mid-infrared optical properties of GaN/Al(x)Ga(1-x)N-type heterostructures on sapphire substrate grown by the Metal-Organic Chemical Vapor Deposition. We show how the polarization-dependent reflection spectrum is affected by the presence of the strain-induced 2D electron gas at the interfaces between Al(x)Ga(1-x)N and GaN layers. In particular, we show that the 2D electron gas contribution, modeled from its density and transport properties, can play a relevant role at the Berreman mode excitation condition. In this framework, our results offer an advanced approach for the optimization and design of GaN-based broadband optoelectronic and energy management devices.
Tuning of the Berreman mode of GaN/AlxGa1-xN heterostructures on sapphire: The role of the 2D-electron gas in the mid-infrared / Bile, A.; Centini, M.; Ceneda, D.; Sibilia, C.; Passaseo, A.; Tasco, V.; Larciprete, M. C.. - In: OPTICAL MATERIALS. - ISSN 0925-3467. - 147:(2024), p. 114708. [10.1016/j.optmat.2023.114708]
Tuning of the Berreman mode of GaN/AlxGa1-xN heterostructures on sapphire: The role of the 2D-electron gas in the mid-infrared
Bile, A.
Primo
Investigation
;Centini, M.Secondo
Supervision
;Ceneda, D.Membro del Collaboration Group
;Sibilia, C.Membro del Collaboration Group
;Tasco, V.Membro del Collaboration Group
;Larciprete, M. C.Ultimo
Supervision
2024
Abstract
We investigated the mid-infrared optical properties of GaN/Al(x)Ga(1-x)N-type heterostructures on sapphire substrate grown by the Metal-Organic Chemical Vapor Deposition. We show how the polarization-dependent reflection spectrum is affected by the presence of the strain-induced 2D electron gas at the interfaces between Al(x)Ga(1-x)N and GaN layers. In particular, we show that the 2D electron gas contribution, modeled from its density and transport properties, can play a relevant role at the Berreman mode excitation condition. In this framework, our results offer an advanced approach for the optimization and design of GaN-based broadband optoelectronic and energy management devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.