The key role played by hydrogen (H) in the near-to-room temperature superconductivity of hydrides at megabar pressures suggests that H doping could produce similar effects in materials at ambient pressure. Here the authors show that ionic gate-driven H intercalation in the layered compound TiSe2 induces a superconducting phase with features distinct from those obtained through other doping techniques.Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe2) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly doping-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe2 via copper, lithium, and electrostatic doping. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation.

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2 / Piatti, Erik; Prando, Giacomo; Meinero, Martina; Tresca, Cesare; Putti, Marina; Roddaro, Stefano; Lamura, Gianrico; Shiroka, Toni; Carretta, Pietro; Profeta, Gianni; Daghero, Dario; Gonnelli, Renato S.. - In: COMMUNICATIONS PHYSICS. - ISSN 2399-3650. - 6:1(2023). [10.1038/s42005-023-01330-w]

Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2

Giacomo Prando;Cesare Tresca;Gianni Profeta;
2023

Abstract

The key role played by hydrogen (H) in the near-to-room temperature superconductivity of hydrides at megabar pressures suggests that H doping could produce similar effects in materials at ambient pressure. Here the authors show that ionic gate-driven H intercalation in the layered compound TiSe2 induces a superconducting phase with features distinct from those obtained through other doping techniques.Hydrogen (H) plays a key role in the near-to-room temperature superconductivity of hydrides at megabar pressures. This suggests that H doping could have similar effects on the electronic and phononic spectra of materials at ambient pressure as well. Here, we demonstrate the non-volatile control of the electronic ground state of titanium diselenide (1T-TiSe2) via ionic liquid gating-driven H intercalation. This protonation induces a superconducting phase, observed together with a charge-density wave through most of the phase diagram, with nearly doping-independent transition temperatures. The H-induced superconducting phase is possibly gapless-like and multi-band in nature, in contrast with those induced in TiSe2 via copper, lithium, and electrostatic doping. This unique behavior is supported by ab initio calculations showing that high concentrations of H dopants induce a full reconstruction of the bandstructure, although with little coupling between electrons and high-frequency H phonons. Our findings provide a promising approach for engineering the ground state of transition metal dichalcogenides and other layered materials via gate-controlled protonation.
2023
superconductivity; trnsition metal dichalcogenides
01 Pubblicazione su rivista::01a Articolo in rivista
Superconductivity induced by gate-driven hydrogen intercalation in the charge-density-wave compound 1T-TiSe2 / Piatti, Erik; Prando, Giacomo; Meinero, Martina; Tresca, Cesare; Putti, Marina; Roddaro, Stefano; Lamura, Gianrico; Shiroka, Toni; Carretta, Pietro; Profeta, Gianni; Daghero, Dario; Gonnelli, Renato S.. - In: COMMUNICATIONS PHYSICS. - ISSN 2399-3650. - 6:1(2023). [10.1038/s42005-023-01330-w]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1700121
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