: We study the effect of doping on the electron-phonon interaction and on the phonon frequencies in doped semiconductors, taking into account the screening in the presence of free carriers at finite temperature. We study the impact of screening on the Fröhlich-like vertex and on the long-range components of the dynamical matrix, going beyond the state-of-the-art description for undoped crystals, thanks to the development of a computational method based on maximally localized Wannier functions. We apply our approach to cubic silicon carbide, where in the presence of doping the Fröhlich coupling and the longitudinal-transverse phonon splitting are strongly reduced, thereby influencing observable properties such as the electronic lifetime.
Electron-Phonon Interaction and Longitudinal-Transverse Phonon Splitting in Doped Semiconductors / Macheda, Francesco; Barone, Paolo; Mauri, Francesco. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 129:18(2022), p. 185902. [10.1103/PhysRevLett.129.185902]
Electron-Phonon Interaction and Longitudinal-Transverse Phonon Splitting in Doped Semiconductors
Macheda, Francesco;Barone, Paolo;Mauri, Francesco
2022
Abstract
: We study the effect of doping on the electron-phonon interaction and on the phonon frequencies in doped semiconductors, taking into account the screening in the presence of free carriers at finite temperature. We study the impact of screening on the Fröhlich-like vertex and on the long-range components of the dynamical matrix, going beyond the state-of-the-art description for undoped crystals, thanks to the development of a computational method based on maximally localized Wannier functions. We apply our approach to cubic silicon carbide, where in the presence of doping the Fröhlich coupling and the longitudinal-transverse phonon splitting are strongly reduced, thereby influencing observable properties such as the electronic lifetime.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.