The IGBT active clamp gate driver is a conveniently method used to protect the switch from the overvoltage by driving the gate input of the IGBT itself. The overvoltage is common during the turn-off of inductive loads or circuits with parasitic elements. This clamping circuit is generally embed into the gate driver circuits. The aim of this paper is to study and model the active clamp circuit giving a compact mathematical model for the power losses calculation. The losses calculation are needed for the heatsink sizing when the system is used in not conventional use, with single or repetitive overvoltages, as for example for the solid state circuit breakers (SSCB) without external passive clamp circuits. Moreover the study has been validated with experimental tests.

On the Active Clamp Gate Driver Thermal Effects / Rubino, L; Rubino, G. - (2019), pp. 478-481. (Intervento presentato al convegno International Conference on Clean Electrical Power tenutosi a Otranto) [10.1109/ICCEP.2019.8890213].

On the Active Clamp Gate Driver Thermal Effects

Rubino G
2019

Abstract

The IGBT active clamp gate driver is a conveniently method used to protect the switch from the overvoltage by driving the gate input of the IGBT itself. The overvoltage is common during the turn-off of inductive loads or circuits with parasitic elements. This clamping circuit is generally embed into the gate driver circuits. The aim of this paper is to study and model the active clamp circuit giving a compact mathematical model for the power losses calculation. The losses calculation are needed for the heatsink sizing when the system is used in not conventional use, with single or repetitive overvoltages, as for example for the solid state circuit breakers (SSCB) without external passive clamp circuits. Moreover the study has been validated with experimental tests.
2019
International Conference on Clean Electrical Power
clamps; Integrated circuit modeling; mathematical model; gate drivers; temperature measurement; voltage control; insulated gate bipolar transistors
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
On the Active Clamp Gate Driver Thermal Effects / Rubino, L; Rubino, G. - (2019), pp. 478-481. (Intervento presentato al convegno International Conference on Clean Electrical Power tenutosi a Otranto) [10.1109/ICCEP.2019.8890213].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1678408
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