This Perspective presents an overview on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication such as entanglement swapping and quantum key distribution. (C) 2021 Author(s).
GaAs quantum dots grown by droplet etching epitaxy as quantum light sources / Filipe Covre Da Silva, Saimon; Undeutsch, Gabriel; Lehner, Barbara; Manna, Santanu; Krieger, Tobias M.; Reindl, Marcus; Schimpf, Christian; Trotta, Rinaldo; Rastelli, Armando. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 119:12(2021), pp. 1-9. [10.1063/5.0057070]
GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
Rinaldo Trotta;
2021
Abstract
This Perspective presents an overview on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication such as entanglement swapping and quantum key distribution. (C) 2021 Author(s).| File | Dimensione | Formato | |
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CovredaSilva_GaAs-quantum-dots_2021.pdf
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