Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices1–9. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (η) of less than 10%1,10. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability1,5,6,9,11, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd2(dba)3) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased η in a much shorter doping time and high electrical conductivities (above 100 S cm−1; ref. 12). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications12, 13.

Transition metal-catalysed molecular n-doping of organic semiconductors / Guo, H.; Yang, C. -Y.; Zhang, X.; Motta, A.; Feng, K.; Xia, Y.; Shi, Y.; Wu, Z.; Yang, K.; Chen, J.; Liao, Q.; Tang, Y.; Sun, H.; Woo, H. Y.; Fabiano, S.; Facchetti, A.; Guo, X.. - In: NATURE. - ISSN 0028-0836. - 599:7883(2021), pp. 67-73. [10.1038/s41586-021-03942-0]

Transition metal-catalysed molecular n-doping of organic semiconductors

Motta A.;
2021

Abstract

Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices1–9. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (η) of less than 10%1,10. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability1,5,6,9,11, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd2(dba)3) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased η in a much shorter doping time and high electrical conductivities (above 100 S cm−1; ref. 12). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications12, 13.
2021
thermoelectric properties; polymer semiconductor; selectron-tranfer; dopant; nanoparticles
01 Pubblicazione su rivista::01a Articolo in rivista
Transition metal-catalysed molecular n-doping of organic semiconductors / Guo, H.; Yang, C. -Y.; Zhang, X.; Motta, A.; Feng, K.; Xia, Y.; Shi, Y.; Wu, Z.; Yang, K.; Chen, J.; Liao, Q.; Tang, Y.; Sun, H.; Woo, H. Y.; Fabiano, S.; Facchetti, A.; Guo, X.. - In: NATURE. - ISSN 0028-0836. - 599:7883(2021), pp. 67-73. [10.1038/s41586-021-03942-0]
File allegati a questo prodotto
File Dimensione Formato  
Guo_Transition_2021.pdf

accesso aperto

Note: full paper
Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Creative commons
Dimensione 6.17 MB
Formato Adobe PDF
6.17 MB Adobe PDF

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1674448
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 150
  • ???jsp.display-item.citation.isi??? 151
social impact