Vertically coupled Si3N4/SiO2 passive microring resonators having different lateral distance from the straight forward waveguide have been investigated. The transmitted and dropped power of the devices was measured. Specifically, by means of input and output polarizers, the polarization conversion between TE and TM mode has been investigated. Main cavity parameters, i.e. finesse and free spectral range have been reconstructed from experimental data. Finally, the results on TE/TM polarization conversion is briefly explained.
Polarization Conversion in Vertically Coupled Si3N4/SiO2 Microring Resonators / Larciprete, Maria Cristina; E. J., Klein; Belardini, Alessandro; D. H., Geuzebroek; A., Driessen; Michelotti, Francesco. - STAMPA. - 709:(2004), pp. 415-417. (Intervento presentato al convegno International School of Quantum Electronics, 39th Course tenutosi a Erice (I) nel October 2003) [10.1063/1.1764035].
Polarization Conversion in Vertically Coupled Si3N4/SiO2 Microring Resonators
LARCIPRETE, Maria Cristina;BELARDINI, ALESSANDRO;MICHELOTTI, Francesco
2004
Abstract
Vertically coupled Si3N4/SiO2 passive microring resonators having different lateral distance from the straight forward waveguide have been investigated. The transmitted and dropped power of the devices was measured. Specifically, by means of input and output polarizers, the polarization conversion between TE and TM mode has been investigated. Main cavity parameters, i.e. finesse and free spectral range have been reconstructed from experimental data. Finally, the results on TE/TM polarization conversion is briefly explained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
