We theoretically and experimentally demonstrate negative refraction in a semiconductor system operating at mid-infrared wavelengths. Such effect is generic and realized by electrons quantum confinement in quantum wells, acting as an adjustable resonance.

Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials / Ferraro, Mario; Hierro, Adrian; Bajo, Miguel Montes; Tamayo-Arriola, Julen; Le Biavan, Nolwenn; Hugues, Maxime; Ulloa, Jose M.; Giudici, Massimo; Chauveau, Jean Michel; Genevet, Patrice. - (2018). (Intervento presentato al convegno 2019 Conference on Lasers and Electro-Optics, CLEO 2019 tenutosi a USA) [10.1364/CLEO_QELS.2019.FTh4M.1].

Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials

Ferraro, Mario
;
2018

Abstract

We theoretically and experimentally demonstrate negative refraction in a semiconductor system operating at mid-infrared wavelengths. Such effect is generic and realized by electrons quantum confinement in quantum wells, acting as an adjustable resonance.
2018
2019 Conference on Lasers and Electro-Optics, CLEO 2019
Metamaterials; semiconductors; zinc oxyde
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials / Ferraro, Mario; Hierro, Adrian; Bajo, Miguel Montes; Tamayo-Arriola, Julen; Le Biavan, Nolwenn; Hugues, Maxime; Ulloa, Jose M.; Giudici, Massimo; Chauveau, Jean Michel; Genevet, Patrice. - (2018). (Intervento presentato al convegno 2019 Conference on Lasers and Electro-Optics, CLEO 2019 tenutosi a USA) [10.1364/CLEO_QELS.2019.FTh4M.1].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1652629
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