Wepresenttheresultsofanexperimentalstudyofmultiplescatteringofpositivelychargedhigh-energyparticlesinbent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.
Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon / Scandale, W.; Arduini, G.; Cerutti, F.; Esposito, L. S.; Garattini, M.; Gilardoni, S.; Losito, R.; Masi, A.; Mirarchi, D.; Montesano, S.; Redaelli, S.; Rossi, R.; Smirnov, G.; Burmistrov, L.; Dubos, S.; Puill, V.; Stocchi, A.; Bandiera, L.; Guidi, V.; Mazzolari, A.; Romangnoni, M.; Murtas, F.; Addesa, F. M.; Cavoto, G.; Iacoangeli, F.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A. A.; Maisheev, V. A.; Sandomirskiy, Yu. E.; Yanovich, A. A.; Kovalenko, A. D.; Taratin, A. M.; Denisov, A. S.; Gavrikov, Yu. A.; Ivanov, Yu. M.; Maliarenko, L. G.; Borg, J.; James, T.; Hall, G.; Pesaresi, M.. - In: THE EUROPEAN PHYSICAL JOURNAL PLUS. - ISSN 2190-5444. - 137:7(2022). [10.1140/epjp/s13360-022-03034-6]
Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
Addesa, F. M.Membro del Collaboration Group
;Cavoto, G.Membro del Collaboration Group
;
2022
Abstract
Wepresenttheresultsofanexperimentalstudyofmultiplescatteringofpositivelychargedhigh-energyparticlesinbent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.| File | Dimensione | Formato | |
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Scandale_Multiple scattering of channeled_2022.pdf
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