The possibility to use electron-beam writing on an electro-optic cross-linkable polymer film deposited on a Si/SiO2 substrate is investigated. Both positive and negative electron-beam writings have been performed, with different exposure doses. Good resolution and a depth of 30 nm was obtained in the positive case, while in the negative case a lower resolution was obtained and a depth of 580 nm. With negative writing we fabricated test channel waveguides of good optical quality.
DIRECT E-BEAM WRITING OF ELECTRO-OPTIC POLYMER CHANNEL WAVEGUIDES / Belardini, Alessandro; Larciprete, Maria Cristina; E., Cianci; V., Foglietti; A., Ratsimihety; A., Rousseau; Michelotti, Francesco. - STAMPA. - 709:(2004), pp. 427-429. (Intervento presentato al convegno International School of Quantum Electronics, 39th Course tenutosi a Erice (I) nel October 2003) [10.1063/1.1764041].
DIRECT E-BEAM WRITING OF ELECTRO-OPTIC POLYMER CHANNEL WAVEGUIDES
BELARDINI, ALESSANDRO;LARCIPRETE, Maria Cristina;MICHELOTTI, Francesco
2004
Abstract
The possibility to use electron-beam writing on an electro-optic cross-linkable polymer film deposited on a Si/SiO2 substrate is investigated. Both positive and negative electron-beam writings have been performed, with different exposure doses. Good resolution and a depth of 30 nm was obtained in the positive case, while in the negative case a lower resolution was obtained and a depth of 580 nm. With negative writing we fabricated test channel waveguides of good optical quality.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
