Fermi surface geometry and inhomogeneous electronic states in Pr1.3-xLa0.7CexCuO4(x = 0.05) with small superconducting volume fraction

We have investigated the electronic structure of protect annealed Pr1.3-xLa0.7CexCuO4 (x = 0.05) with small superconducting volume fraction by means of angle-resolved photoemission spectroscopy (ARPES) and scanning photoemission spectromicroscopy (SPEM). The ARPES result exhibits an electron pocket around the (0, π) point whose area is consistent with doping level of 0.09 electron per Cu. In addition, the hole band top around the (π/2, π/2) point is ∼15 meV below the Fermi level showing that the present system is dominated by the antiferromagnetic and nonsuperconducting state. The SPEM result indicates inhomogeneous electronic structure with a minority state which is less electron doped than the majority state. Under the relatively small Ce concentration of x = 0.05, the nonsuperconducting state is robust against protect annealing and is accompanied by the inhomogeneity.