In this work we present a Junction Field Effect Transistor (JFET) for analog application based on hydrogenated amorphous silicon. The device is a metal gate/p-doped/intrinsic/n-doped/drain-source metal contacts stacked structure deposited on glass substrate. With respect to the metal/oxide/semiconductor thin film transistor, the reported device does not need the presence of the insulation layer simplifying therefore the fabrication process. Careful attention has been paid to the thickness and doping of the different amorphous silicon layers in order to achieve ease modulation of the n-doped channel and low threshold voltage. Threshold voltages around -2.5 Volt and transconductance values in the order of 10-7 A/V have been achieved.
On-glass thin film transistor based on p-i-n amorphous silicon junction / Lovecchio, N.; Ferrara, V.; Caputo, D.; De Cesare, G.. - (2021), pp. 60-63. (Intervento presentato al convegno 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021 tenutosi a Opatija; Croatia) [10.23919/MIPRO52101.2021.9596739].
On-glass thin film transistor based on p-i-n amorphous silicon junction
Lovecchio N.
Writing – Original Draft Preparation
;Ferrara V.Writing – Review & Editing
;Caputo D.Writing – Review & Editing
;De Cesare G.Supervision
2021
Abstract
In this work we present a Junction Field Effect Transistor (JFET) for analog application based on hydrogenated amorphous silicon. The device is a metal gate/p-doped/intrinsic/n-doped/drain-source metal contacts stacked structure deposited on glass substrate. With respect to the metal/oxide/semiconductor thin film transistor, the reported device does not need the presence of the insulation layer simplifying therefore the fabrication process. Careful attention has been paid to the thickness and doping of the different amorphous silicon layers in order to achieve ease modulation of the n-doped channel and low threshold voltage. Threshold voltages around -2.5 Volt and transconductance values in the order of 10-7 A/V have been achieved.File | Dimensione | Formato | |
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